WPT2F30 single, pnp, -30v, -3a, power transistor descriptions the WPT2F30 is pnp bipolar power transistor with very low saturation voltage. this device is suitable for use in charging circuit and other power management. standard product WPT2F30 is pb-free. features ultra low collector-to-emitter saturation voltage high dc current gain >100 3a continue collector current small package sot-23-6l. applications charging circuit power regulator other power management in portable equipments sot-23-6l pin configuration (top view) 2f30 yyww 2f30 = device code yy = year ww = week marking order information device package shipping WPT2F30-6/tr sot-23-6l 3000/reel&tape 12 3 4 5 6 1 2 3 4 5 6 c c b e c c 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal resistance ratings a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% d maximum junction temperature t j =150c. electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol value unit collector-emitter voltage v ceo -30 v collector-base voltage v cbo -30 v emitter-base voltage v ebo -6 v continues collector current a -3 a continues collector current b i c -2 a pulse collector current c i cm -6 a power dissipation a 1.2 w power dissipation b p d 0.8 w junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c parameter symbol value unit junction-to-ambient thermal resistance a r ja 104 c/w junction-to-ambient thermal resistance b r ja 155 c/w parameter symbol test conditions min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0ma -30 v collector-base breakdown voltage bv cbo i c =-1ma, i e =0ma -30 v emitter-base breakdown voltage bv ebo i e =-100ua, i c =0ma -6 v collector cutoff current i cbo v cb =-30v -100 na emitter cutoff current i ebo v eb =-5v -100 na i c =-2a, i b =-200ma -0.28 -0.35 v i c =-0.5a, i b =-5ma -0.20 -0.30 v collector-emitter sa turation voltage c v ce(sat) i c =-0.8a, i b =-10ma -0.28 -0.39 v base-emitter satu ration voltage c v be(sat) i c =-2a, i b =-200ma -1.0 -1.5 v base-emitter forward voltage v be(on) i c =-0.5a, v ce =-2v -0.7 -1.0 v dc current gain c h fe v ce =-2v,i c =-1a 100 200 300 WPT2F30 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current safe operating area 0 -1-2-3-4-5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 i b = -5ma -10ma -20ma -30ma -40ma -50ma collector current: i c (a) collector to emitter voltage: v ce (v) transient thermal res p onse ( junction-to-ambient ) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) ? 1m ? 2m ? 5m ? 0.01 ? 0.02 ? 0.05 ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 collector current : i c (a) base to emitter voltage : v be (v) v ce = ? 2v ta = 85 c ? 45 c 25 c ? 2m ? 5m ? 0m ? 20m ? 50m ? 100m ? 200m ? 500m ? 1 ? 2 ? 5 ? 10 ? 1m dc current gain : h fe collector current : i c (a) 5k 2k 1k 500 200 100 50 20 10 5 v ce = ? 2v ta=85 c 25 c ? 45 c ? 2 ? 2m ? 5m ? 10m ? 20m ? 50m ? 100m ? 200m ? 500m ? 1 ? 2m ? 5m ? 10 m ? 20m ? 50m ? 100m ? 200m ? 500m ? 2 ? 1 ? 5 ? 10 ? 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) i c /i b = 10 ta = 85 c ? 45 c 25 c 10 0.01 0.1 1.0 10 100 0.1 1.0 100 s 1 ms 10 ms 100 ms 1 s dc single pulse t a = 25 c collector to emitter voltage: v ce (v) collector current: i c (a) 10 -4 10 -3 10 -2 10 -1 600 100 10 1 square wave pulse duration (s) normalized transient thermal impedance z 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty = 0.5 1. duty cycle, d = 2. r thja = 104 c/w 3. t jm - t a = p cm x z thja t 1 t 2 t 1 t 2 4. surface mounted p cm thja x rthja WPT2F30 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-23-6l dimensions in millimeters symbol min. typ. max. a 1.050 1.150 1.250 a1 0.000 - 0.100 a2 1.050 1.100 1.150 b 0.300 0.400 0.500 c 0.100 - 0.200 d 2.820 2.920 3.020 e 1.500 1.600 1.700 e1 2.650 2.800 2.950 e 0.950(basic) e1 1.800 1.900 2.000 l 0.300 - 0.600 0 o - 8 o WPT2F30 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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